Power MOSFETs are key to modern electronics, enabling efficient power conversion and control in a wide range of applications. However handling short-circuit events remains a challenge—especially for SiC and GaN devices. The Ferro-Power MOSFET changes the game by integrating ferroelectric materials into the gate, reducing temperature rise and enhancing reliability without modifying the device layout or control electronics.
Simulations of a 1.2 kV SiC MOSFET show up to 31% lower temperatures and 42% less current surge during faults, making this a breakthrough for automotive and industrial power systems. With advances in CMOS-compatible hafnium oxide, this innovation is set to shape the future of power semiconductors!
#PowerElectronics #MOSFET #SiC #GaN #Innovation #TechBreakthrough #Ferroelectrics #Hafnium Oxide
Check out our paper (in collaboration with Prof. A. Irace and L. Maresca from UniNa):